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Low leakage, low threshold voltage, split-gate flash cell operation
Web本篇論文提出一種新型的分離閘快閃記憶體(AND-type Split Gate Flash),此種記憶體可以使單一元件具有兩個位元的儲存能力,在0.18μm內嵌式快閃記憶體的技術中已被成功製造出來,以源極電子注入機制 (Source Side Injection, SSI)完成寫入,以福樂諾漢穿隧效應(FN Tunneling)達成抹除操作。 WebR&D: 40nm Split Gate Embedded Flash Macro With Flexible 2-in-1 Architecture Hung-Chang Yu, Ku-Feng Lin, and Yu-Der Chih, Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, ROC, Aug. 22, 2024 ... Abstract: "This paper presents a 40nm 9.5Mb embedded flash (eflash) macro which can be partitioned as code storage and data storage in a ... find ad groups for a user
Splitgate - Wikipedia
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